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BQ76200使用

Other Parts Discussed in Thread: BQ76200

如下图使用BQ76200构成高侧mos驱动电路,实际实验结果为:VBAT_SEN电压为30V,当CP_EN=1,DSG_EN=1时,测量VDDCP电压40V,但是BQ_DSG对地电压只有30.5V,完全不足以驱动mos。更换C132结果依然一样。

请帮我分析一下问题出在哪里?,谢谢

Power Discharge_01 0.pdf