您好,正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产品users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。
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您好,正在用ti的MSP-EXP430FR2311。需要实现程序中某些参数的掉电存储。在driverlib users guide和产品users guide 都没找到相关的内容。不知道是否有对flash进行读写操作的例程或者操作说明。在drivelib example也没找到相关例程。
例程里是FR2433,用的0x1800存储地址。
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写
FRAMWrite_Char((uint8_t *)0x1800, 0xAA);
读
uint8 temp; temp = *((uint8_t *)0x1800);
写函数 每个芯片可能有所差异,以下为范例
void FRAMWrite_Char(uint8_t *FRAM_write_ptr, uint8_t data) { SYSCFG0 = FRWPPW | PFWP; *FRAM_write_ptr = data; SYSCFG0 = FRWPPW | PFWP | DFWP; }
Outman J 说:您好,只能换了个430的样片。那FRAM区域里F100h到FFFFh是代码存储区域,其中FF80h到FFFFh是存储中断向量和标志位的地方,这样的么?
所以不对那部分区域进行操作就不会有问题了对吧? 另外在F100h到FFFFh是代码存储区域,烧写的代码是从高位到低位填还是低位到高位填应该怎么获知?
这样才好确定掉电存储的参数是从F100h开始写入还是从FFFFh开始写入,以避免对代码段存储空间的错误操作。不知这样的理解对否。
感谢您的解答!
理解正确。烧写的代码是从高位到低位填还是低位到高位填应该怎么获知?可以在debug的时候,看一下memory地址。